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| Previous Datasheet Index Next Data Sheet PD - 9.764 IRGPH40F INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) 3.3V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 29 17 58 58 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.77 -- 40 -- Units C/W g (oz) C-273 Revision 0 To Order Previous Datasheet Index Next Data Sheet IRGPH40F Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.3 -- V/C VGE = 0V, I C = 1.0mA -- 2.5 3.3 IC = 17A V GE = 15V -- 3.2 -- V IC = 29A See Fig. 2, 5 -- 3.0 -- IC = 17A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 5.0 11 -- S VCE = 100V, I C = 17A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1000 VGE = 0V, V CE = 1200V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 45 67 IC = 17A 11 16 nC VCC = 400V See Fig. 8 17 26 VGE = 15V 33 -- TJ = 25C 17 -- ns IC = 17A, V CC = 960V 250 490 VGE = 15V, R G = 10 210 390 Energy losses include "tail" 1.0 -- 3.0 -- mJ See Fig. 9, 10, 11, 14 4.0 7.5 32 -- TJ = 150C, 20 -- ns IC = 17A, V CC = 960V 480 -- VGE = 15V, R G = 10 450 -- Energy losses include "tail" 8.3 -- mJ See Fig. 10, 14 13 -- nH Measured 5mm from package 1200 -- VGE = 0V 75 -- pF VCC = 30V See Fig. 7 15 -- = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-274 To Order Previous Datasheet Index Next Data Sheet IRGPH40F 40 For bo th: Tria ngular w ave: LO A D C U R RE NT (A ) 30 D uty cyc le: 50% TJ = 12 5C T s ink = 90C G ate drive as spec ifie d Pow er D issipation = 35W C lam p voltage: 80% of rated Sq uare w ave: 20 60% of rated voltage 10 Id e a l d iod e s 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 1000 I C , C o lle ctor-to-E m itter C urre nt (A ) IC , C ollector-to-E mitter C urrent (A ) TJ = 2 5C TJ = 15 0 C 100 TJ = 15 0C 10 10 TJ = 25 C 1 0.1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.01 5 10 V C C = 10 0 V 5 s P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to -E m itter V o lta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-275 To Order Previous Datasheet Index Next Data Sheet IRGPH40F 30 V G E = 15 V 5.0 V G E = 1 5V 8 0 s P U LS E W IDTH I C = 3 4A V C E , C ollec tor-to -E m itte r V o lta ge (V ) M axim um DC C ollector C urrent (A ) 20 4.0 10 3.0 I C = 1 7A I C = 8.5 A 2.0 -60 -40 -20 0 20 40 60 80 100 120 14 0 160 0 25 50 75 100 125 150 T C , C ase Tem perature (C ) T C , C as e T em pe ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herm al Response (Z th JC ) D = 0 .5 0 0.2 0 0.1 0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.0 2 0.0 1 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-276 To Order Previous Datasheet Index Next Data Sheet IRGPH40F 24 0 0 20 0 0 16 0 0 Cies 12 0 0 Coes V G E , G a te-to-E m itte r V o ltag e (V ) 100 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0V I C = 17 A 16 C, C apacitance (pF) 12 8 800 Cres 400 4 0 1 10 0 0 10 20 30 40 50 V C E , C o llector-to-Em itter V oltage (V) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 4 .8 To ta l S w itc hing Lo ss es (m J) Total S w itching Losses (m J) VC C VG E TC IC = 9 60 V = 15 V = 25C = 1 7A 100 R G = 10 V G E = 1 5V V C C = 96 0V I C = 34 A 4 .6 10 I C = 17 A I C = 8.5 A 4 .4 1 4 .2 4 .0 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R es istance ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-277 To Order Previous Datasheet Index Next Data Sheet IRGPH40F 25 20 I , C o llec to r-to-E m itter C urren t (A ) T o ta l S w itc hin g L o s s e s (m J ) RG TC VCC VGE = 10 = 1 50C = 96 0V = 1 5V 1000 VG E E 20 V G= T J = 12 5C 100 15 S A FE O P E RA TIN G A RE A 10 10 1 5 C 0.1 1 0 0 10 20 30 40 10 100 1000 10000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o llec to r-to -E m itte r V o lta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-278 To Order |
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